JCET 2SB1189
PNP Transistor
FEATURES
z High breakdown voltage z Complements to 2SD1767MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) 1. BASE 2. COLLECTOR 1 2 3. EMITTER 3 Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -80 -5 -0.7 0.5 150 -55~150 Unit V V V A W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test conditions V(BR)CBO IC=-50μA,IE=0 V(BR)CEO IC=-2mA,IB=0 V(BR)EBO IE=-50μA,IC=0 ICBO