| Part Number | 2SB1189 Datasheet |
|---|---|
| Manufacturer | AiT Semiconductor |
| Overview |
The 2SB1189 is available in the SOT-89 package.
PIN DESCRIPTION
FEATURE
• High breakdown voltage • Complements to 2SD1767
ORDERING INFORMATION
Package Type
Part Number
SOT-89
2SB1189
SPQ
1,00.
* High breakdown voltage * Complements to 2SD1767 ORDERING INFORMATION Package Type Part Number SOT-89 2SB1189 SPQ 1,000pcs/Reel AiT provides all RoHS Compliant Products PIN# 1 2 3 SOT-89 DESCRIPTION Base Collector Emitter ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise specified. . |
2SB1189 Datasheet and Specifications PDF
The 2SB1189 is a PNP MEDIUM POWER TRANSISTOR.
Key Specifications
| Package | SOT-89 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2SB1189 Datasheet |
|---|---|
| Description | Medium Power Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Medium Power Transistor 2SB1189 Transistors Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base Voltage Colle. High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Collector current Collector power dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg. |
| Part Number | 2SB1189 Datasheet |
|---|---|
| Description | Medium power transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
Medium power transistor(-80V,-0.7A)
FEATURES
High breakdown voltage,BVCEO=-80V, And high current,IC=-0.7A.
Complementary the 2SD1767.
Pb
Lead-free
Production specification
2SB1189
ORDERING INF.
* High breakdown voltage,BVCEO=-80V, And high current,IC=-0.7A. * Complementary the 2SD1767. Pb Lead-free Production specification 2SB1189 ORDERING INFORMATION Type No. Marking 2SB1189 BDP/BDQ/BDR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Paramet. |
| Part Number | 2SB1189 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | JCET |
| Overview | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR (PNP) SOT-89-3L FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RA. z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 1. BASE 2. COLLECTOR 1 2 3. EMITTER 3 Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collect. |