2SB1182 Datasheet PDF

FEATURES

1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.
●Structure Epitaxial planar type PNP silicon transistor
●Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1+−00..21 C0.5 2.3+−00..21 0.5±0.1 2SB1240 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.9 5.5+−00..31 1.5±0.3 0.9 1.5 2.5 9.5±0.5 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.1 ROHM : ATV (1) Emitter (2) Collector (3) Base
●Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO −40 −32 −5 Collector current −2 IC −3 Collector power 2SB1182 dissipation 2SB1240 10 PC 1 Junction temperature Tj 150 Storage temperature Tstg −55 to 150 ∗1 Single pulse, Pw=100ms ∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Unit V V V A(DC) A (Pulse) ∗1 W (Tc=25°C) W ∗2 °C °C
●Electrical characteristics (Ta=25C) Parameter Symbol Min.