2SB1182 - Medium power Transistor

ROHM

Key Features

Low VCE(sat). VCE(sat) = 0.5V (Typ. ) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.
Structure Epitaxial planar type PNP silicon transistor.
Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1+.
00..21 C0.5 2.3+.
00..21 0.5±0.1 2SB1240 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.9 5.5+.
00..31 1.5±0.3 0.9 1.5 2.5 9.5±0.5 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 0.65Max. 14.5±0.5 0.

2SB1182 medium power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SB1182
Manufacturer	ROHM
File Size	143.53 KB
Description	Medium power Transistor
Datasheet	2SB1182 Datasheet

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Other Datasheets by ROHM

Part Number	Description
2SB1181	Power Transistor
2SB1183	Power transistor
2SB1184	Power Transistor
2SB1184F5	Epitaxial Planar PNP Silicon Transistors
2SB1185	Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1+−00..21 C0.5 2.3+−00..21 0.5±0.1 2SB1240 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.9 5.5+−00..31 1.5±0.3 0.9 1.5 2.5 9.5±0.5 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.