Datasheet Summary
Medium power transistor (- 32V,
- 2A)
2SB1182 / 2SB1240
- Features
1) Low VCE(sat).
VCE(sat) =
- 0.5V (Typ.) (IC/IB =
- 2A /
- 0.2A) 2) plements 2SD1758 / 2SD1862.
- Structure Epitaxial planar type PNP silicon transistor
- Dimensions (Unit : mm)
6.5±0.2 5.1+- 00..21
C0.5
2.3+- 00..21 0.5±0.1
2SB1240
6.8±0.2
2.5±0.2
4.4±0.2
1.0 0.9
5.5+- 00..31 1.5±0.3 0.9 1.5
2.5 9.5±0.5
0.75 0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1 1.0±0.2
(1) (2) (3)
ROHM : CPT3 EIAJ : SC-63
(1) Base (2) Collector (3) Emitter
0.65Max.
14.5±0.5...
