2SB1182 - Medium Power Transistor

Galaxy Microelectronics

Key Features

Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A).
Complements the 2SD1758. Pb Lead-free 2SB1182.

2SB1182 medium power transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SB1182
Manufacturer	Galaxy Microelectronics
File Size	263.02 KB
Description	Medium Power Transistor
Datasheet	2SB1182 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SB1182	Medium power Transistor	Rohm
2SB1182	Silicon PNP transistor	BLUE ROCKET ELECTRONICS
2SB1182	Silicon PNP Power Transistor	Inchange Semiconductor
2SB1182	Medium Power Transistor	Kexin
2SB1182	PNP PLASTIC ENCAPSULATE TRANSISTORS	Weitron

Other Datasheets by Galaxy Microelectronics

Part Number	Description
2SB1184	PNP Silicon Epitaxial Planar Transistor
2SB1185	Power Transistor
2SB1188	PNP Silicon Epitaxial Planar Transistor
2SB1189	Medium power transistor
2SB1119	PNP Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Product specification Medium Power Transistor FEATURES  Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A)  Complements the 2SD1758. Pb Lead-free 2SB1182 APPLICATIONS  Epitaxial planar type.  PNP silicon transistor. Ordering Information Part Number Package 2SB1182□ TO-252 □: none is for Lead Free package; “G” is for Halogen Free package. TO-252 Shipping 80/Tube or2500/Tape Reel Marking Code B1182 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Collector-Base Volage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation -40 V -32 V -5 V -2(DC) A -3(Pulse) A 1.