2SB1182 Description
Product specification Medium Power Transistor.
2SB1182 Key Features
- Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A)
- plements the 2SD1758
2SB1182 is Medium Power Transistor manufactured by Galaxy Microelectronics.
| Manufacturer | Part Number | Description |
|---|---|---|
ROHM |
2SB1182 | Medium power Transistor |
| 2SB1182 | Silicon PNP Power Transistor | |
Kexin Semiconductor |
2SB1182 | Medium Power Transistor |
Weitron |
2SB1182 | PNP PLASTIC ENCAPSULATE TRANSISTORS |
Unisonic Technologies |
2SB1182 | PNP TRANSISTOR |
Product specification Medium Power Transistor.