2SB1182 Overview
Product specification Medium Power Transistor.
2SB1182 Key Features
- Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A)
- plements the 2SD1758
Medium Power Transistor
| Part number | 2SB1182 |
|---|---|
| Manufacturer | Galaxy Microelectronics |
| File Size | 263.02 KB |
| Description | Medium Power Transistor |
| Datasheet | 2SB1182-GME.pdf |
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Product specification Medium Power Transistor.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SB1182 | Medium power Transistor | Rohm |
| 2SB1182 | Silicon PNP Power Transistor | Inchange Semiconductor | |
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2SB1182 | Medium Power Transistor | Kexin |
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2SB1182 | PNP PLASTIC ENCAPSULATE TRANSISTORS | Weitron |
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2SB1182 | PNP TRANSISTOR | UTC |
See all Galaxy Microelectronics datasheets
| Part Number | Description |
|---|---|
| 2SB1184 | PNP Silicon Epitaxial Planar Transistor |
| 2SB1185 | Power Transistor |
| 2SB1188 | PNP Silicon Epitaxial Planar Transistor |
| 2SB1189 | Medium power transistor |
| 2SB1119 | PNP Epitaxial Planar Silicon Transistors |
| 2SB1124 | PNP Epitaxial Planar Silicon Transistors |
| 2SB1132 | PNP Silicon Epitaxial Planar Transistor |
| 2SB1197 | Silicon Epitaxial Planar Transistor |
| 2SB1073 | PNP Transistor |
| 2SB1202 | PNP Epitaxial Planar Silicon Transistors |