| Part number | 2SB1182 |
|---|---|
| Download | 2SB1182 Datasheet (PDF) |
| File Size | 238.38 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
ROHM |
2SB1182 | Medium power Transistor |
Kexin Semiconductor |
2SB1182 | Medium Power Transistor |
Weitron |
2SB1182 | PNP PLASTIC ENCAPSULATE TRANSISTORS |
Unisonic Technologies |
2SB1182 | PNP TRANSISTOR |
Galaxy Microelectronics |
2SB1182 | Medium Power Transistor |
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1182 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -200mA V(BR)CBO Collector-Base Breakdown Voltage IC= -50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;.
