2SB1182 - Silicon PNP Power Transistor

Inchange Semiconductor

General Description

Small and slim package 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter V

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Datasheet Details

Part number	2SB1182
Manufacturer	Inchange Semiconductor
File Size	238.38 KB
Description	Silicon PNP Power Transistor
Datasheet	2SB1182 Datasheet

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1182 DESCRIPTION ·Small and slim package ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 1.5 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.