| Part number | 2SB1182 |
|---|---|
| Datasheet | 2SB1182-InchangeSemiconductor.pdf |
| File Size | 238.38 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
|
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1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1182 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -200mA V(BR)CBO Collector-Base Breakdown Voltage IC= -50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SB1182 | Medium power Transistor | Rohm |
 |
2SB1182 | Medium Power Transistor | Kexin |
 |
2SB1182 | PNP PLASTIC ENCAPSULATE TRANSISTORS | Weitron |
 |
2SB1182 | PNP TRANSISTOR | UTC |
 |
2SB1182 | Medium Power Transistor | GME |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB1184 | Silicon PNP Power Transistor |
| 2SB1100 | Silicon PNP Power Transistors |
| 2SB1144 | Silicon PNP Power Transistors |
| 2SB1152 | Silicon PNP Power Transistors |
| 2SB1153 | Silicon PNP Power Transistors |
| 2SB1089 | Silicon PNP Power Transistors |
| 2SB1090 | Silicon PNP Power Transistors |
| 2SB1095 | Silicon PNP Power Transistors |
| 2SB1201 | Silicon PNP Power Transistor |
| 2SB1202 | Silicon PNP Power Transistor |
