Datasheet Details
| Part number | 2SB1184 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 240.38 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB1184-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1184.
| Part number | 2SB1184 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 240.38 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB1184-InchangeSemiconductor.pdf |
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·Low VCE(sat) ·Small and slim package ·Complements the 2SD1760/2SD1864 ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 1.0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1184 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;
IB= -200mA VBE(sat) Base-Emitter Saturation Voltage IC= -2A;
IB= -200mA V(BR)CBO Collector-Base Breakdown Voltage IC= -50uA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1184 | Power Transistor | Rohm |
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2SB1184 | PNP Transistor | JCET |
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2SB1184 | Power transistor | Kexin |
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2SB1184 | PNP Transistor | Weitron |
 |
2SB1184 | PNP Silicon Epitaxial Planar Transistor | GME |
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