Datasheet4U Logo Datasheet4U.com

2SB1182 - Medium Power Transistor

Key Features

  • Low VCE(sat). Epitaxial planar type 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse Collector power dissipation(Tc=25 ) Junction temperature Storage temperature Symbol VCBO VCEO VEB.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1182 Medium power Transistor Rohm
2SB1182 Silicon PNP transistor BLUE ROCKET ELECTRONICS
2SB1182 Silicon PNP Power Transistor Inchange Semiconductor
2SB1182 PNP PLASTIC ENCAPSULATE TRANSISTORS Weitron
2SB1182 PNP TRANSISTOR UTC

Other Datasheets by Kexin Semiconductor

Part Number Description
2SB1181 Power Transistor
2SB1184 Power transistor
2SB1188 Medium Power Transistor
2SB1189 Medium Power Transistor
2SB1114 Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Medium Power Transistor 2SB1182 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). Epitaxial planar type 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.