2SB1182 Datasheet Medium Power Transistor

Manufacturer: Kexin Semiconductor

Overview: SMD Type Medium Power Transistor 2SB1182 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.

Datasheet Details

Low VCE(sat). Epitaxial planar type 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse Collector power dissipation(Tc=25 ) Junction temperature Storage temperature Symbol VCBO VCEO VEB.

Part Number	Description	Manufacturer
2SB1182	Medium power Transistor	Rohm
2SB1182	Silicon PNP Power Transistor	Inchange Semiconductor
2SB1182	PNP PLASTIC ENCAPSULATE TRANSISTORS	Weitron
2SB1182	PNP TRANSISTOR	UTC
2SB1182	Medium Power Transistor	GME