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2SB1188 - Medium Power Transistor

Key Features

  • Low VCE(sat). VCE(sat) = -0.5V (Typ. ) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Collector current Collector power dissipation Jumction temperature Storage temperature.
  • PW=100ms Symbol VCBO VCEO VEBO IC ICP.
  • PC Tj Tstg Rating -40 -32 -5 -2 -3 0.5 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltae Collector-emitter breakdown voltage Emi.

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SMD Type Medium Power Transistor 2SB1188 Transistors Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Collector current Collector power dissipation Jumction temperature Storage temperature * PW=100ms Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -40 -32 -5 -2 -3 0.