2SB1188 - Medium power Transistor

ROHM

Key Features

w VCE(sat). VCE(sat) = 0.5V (Typ. ) (IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862.
Dimensions (Unit : mm) 2SB1188 4.5+.
00..21 1.6±0.1 1.5.
+00..12 2SB1182 6.5±0.2 5.1+.
00..21 C0.5 2.3+.
00..21 0.5±0.1 0.5±0.1 4.0±0.3 2.5.
+00..12.
Structure Epitaxial planar type PNP silicon transistor 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4.
+00..015 ROHM : MPT3 EIAJ : SC-62 (1) Base (2).

2SB1188 medium power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SB1188
Manufacturer	ROHM
File Size	170.46 KB
Description	Medium power Transistor
Datasheet	2SB1188 Datasheet

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Other Datasheets by ROHM

Part Number	Description
2SB1181	Power Transistor
2SB1182	Medium power Transistor
2SB1183	Power transistor
2SB1184	Power Transistor
2SB1184F5	Epitaxial Planar PNP Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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5.5+−00..31 1.5±0.3 0.9 1.5 2.5 9.5±0.5 Medium power transistor (32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. Dimensions (Unit : mm) 2SB1188 4.5+−00..21 1.6±0.1 1.5−+00..12 2SB1182 6.5±0.2 5.1+−00..21 C0.5 2.3+−00..21 0.5±0.1 0.5±0.1 4.0±0.3 2.5−+00..12 Structure Epitaxial planar type PNP silicon transistor 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4−+00..015 ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter ∗Abbreviated symbol: BC 2SB1240 6.8±0.2 2.5±0.2 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 4.4±0.2 1.0 0.9 0.65Max. 14.