2SB1188 Datasheet PDF

FEATURES

1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862.
●Dimensions (Unit : mm) 2SB1188 4.5+−00..21 1.6±0.1 1.5−+00..12 2SB1182 6.5±0.2 5.1+−00..21 C0.5 2.3+−00..21 0.5±0.1 0.5±0.1 4.0±0.3 2.5−+00..12
●Structure Epitaxial planar type PNP silicon transistor 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4−+00..015 ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter ∗Abbreviated symbol: BC 2SB1240 6.8±0.2 2.5±0.2 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 4.4±0.2 1.0 0.9 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.1 ROHM : ATV ∗ Denotes hFE (1) Emitter (2) Collector (3) Base
●Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO −40 Collector-emitter voltage VCEO −32 Emitter-base voltage VEBO −5 Collector current −2 IC −3 2SB1188 Collector power dissipation 2SB1182 2S...