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2SB1185 - Power Transistor

Key Features

  • 1) Low VCE(sat). VCE(sat) =.
  • 0.5V (Typ. ) (IC / IB =.
  • 2A /.
  • 0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) (96-128-B57) 223 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SB1184 / 2SB1243 / 2SB1185 FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows : 224 Transistors FElectrical characteristic curves 2SB1184 / 2SB1243.

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Datasheet Details

Part number 2SB1185
Manufacturer ROHM
File Size 129.37 KB
Description Power Transistor
Datasheet download datasheet 2SB1185 Datasheet

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Other Datasheets by ROHM

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors Power Transistor (*60V, *3A) 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762.