Datasheet Summary
isc Silicon PNP Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min.)
- Good Linearity of hFE
- Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.)@ IC= -2A
- plement to Type 2SD1762
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplifier applications.
- Driver stage amplifier...
