2SB1185 - PNP Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) Good Linearity of hFE Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -2A Complement to Type 2SD1762 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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2SB1185 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SB1185
Manufacturer	Inchange Semiconductor
File Size	213.93 KB
Description	PNP Transistor
Datasheet	2SB1185 Datasheet

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isc Silicon PNP Power Transistor 2SB1185 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -2A ·Complement to Type 2SD1762 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4.