Datasheet Details
| Part number | 2SB1185 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.93 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1185-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB1185.
| Part number | 2SB1185 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.93 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1185-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -2A ·Complement to Type 2SD1762 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4.5 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1185 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1185 | Power Transistor | Rohm |
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2SB1185 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SB1185 | Power Transistor | GME |
| Part Number | Description |
|---|---|
| 2SB1186 | PNP Transistor |
| 2SB1186A | PNP Transistor |
| 2SB1187 | PNP Transistor |
| 2SB1101 | PNP Transistor |
| 2SB1102 | PNP Transistor |
| 2SB1103 | PNP Transistor |
| 2SB1105 | PNP Transistor |
| 2SB1106 | PNP Transistor |
| 2SB1133 | PNP Transistor |
| 2SB1134 | PNP Transistor |