Datasheet Details
| Part number | 2SB1187 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.71 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1187-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB1187.
| Part number | 2SB1187 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.71 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1187-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD1761 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -6 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1187 | Pnp Transistor | Rohm |
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2SB1187 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SB1186 | PNP Transistor |
| 2SB1186A | PNP Transistor |
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| 2SB1102 | PNP Transistor |
| 2SB1103 | PNP Transistor |
| 2SB1105 | PNP Transistor |
| 2SB1106 | PNP Transistor |
| 2SB1133 | PNP Transistor |
| 2SB1134 | PNP Transistor |