2SB1186A - PNP Transistor

Inchange Semiconductor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min.) Good Linearity of hFE Complement to Type 2SD1763A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

Driver stage amplifier appli

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2SB1186A pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SB1186A
Manufacturer	Inchange Semiconductor
File Size	212.66 KB
Description	PNP Transistor
Datasheet	2SB1186A Datasheet

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min.) ·Good Linearity of hFE ·Complement to Type 2SD1763A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 2 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1186A isc website：www.iscsemi.