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2SB1186 - PNP Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) Good Linearity of hFE Complement to Type 2SD1763 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

Driver stage amplifier appli

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INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1186 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Good Linearity of hFE ·Complement to Type 2SD1763 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.