2SB1188 Description
SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP).
2SB1188 Key Features
- When mounted on a 40-40-1mm ceramic board. ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
- Collector-emitter saturation voltage
- Low -1.6mA optimize board space. -0.4 -1.4mA
- Low power loss, high efficiency. drop
- High current capability, low forward voltage -1.2mA -0.3
- High surge capability. -1.0mA -0.8mA for overvoltage protection
- Guardring -0.2 -0.6mA
- Ultra high-speed switching. -0.4mA -0.1 epitaxial planar chip, metal silicon junction
- RoHS productCOLLECTOR-EMITTER Halogen free product for packing code suffix "H"
- 0.6 process design, excellent power dissipation offers