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2SB1188 - Medium power transistor

Key Features

  • z Low VCE(SAT)=-0.5V(Typ. ) (IC/IB=-1.5A/-0.15A). z Complementary the 2SD1766. Pb Lead-free 2SB1188.

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Production specification Medium power transistor FEATURES z Low VCE(SAT)=-0.5V(Typ.) (IC/IB=-1.5A/-0.15A). z Complementary the 2SD1766. Pb Lead-free 2SB1188 APPLICATIONS z Epitaxial planar type. z PNP silicon transistor. ORDERING INFORMATION Type No. Marking 2SB1188 BCP/BCQ/BCR SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO IC PC Emitter-Base Voltage Collector Current –DC -Pulse Collector power dissipation -5 V -2 -3 A 350 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ E036 Rev.A www.gmicroelec.