2SB1185 Overview
Power.
2SB1185 Key Features
- Low VCE(sat). VCE(sat)=-0.5V(TYP.) (IC/IB=-2A/-0.2A)
- plements the 2SD1762
- 55 to +150 ℃
| Part number | 2SB1185 |
|---|---|
| Datasheet | 2SB1185-GME.pdf |
| File Size | 187.43 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | Power Transistor |
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Power.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SB1185 | Power Transistor | Rohm |
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2SB1185 | SILICON POWER TRANSISTOR | SavantIC |
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2SB1185 | PNP Transistor | INCHANGE |
See all Galaxy Microelectronics datasheets
| Part Number | Description |
|---|---|
| 2SB1182 | Medium Power Transistor |
| 2SB1184 | PNP Silicon Epitaxial Planar Transistor |
| 2SB1188 | PNP Silicon Epitaxial Planar Transistor |
| 2SB1189 | Medium power transistor |
| 2SB1119 | PNP Epitaxial Planar Silicon Transistors |
| 2SB1124 | PNP Epitaxial Planar Silicon Transistors |
| 2SB1132 | PNP Silicon Epitaxial Planar Transistor |
| 2SB1197 | Silicon Epitaxial Planar Transistor |
| 2SB1073 | PNP Transistor |
| 2SB1202 | PNP Epitaxial Planar Silicon Transistors |