2SB1185 - Power Transistor

Galaxy Microelectronics

Key Features

Low VCE(sat). VCE(sat)=-0.5V(TYP. ) (IC/IB=-2A/-0.2A).
Complements the 2SD1762. Pb Lead-free Production specification 2SB1185 TO-220AB.

2SB1185 power transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SB1185
Manufacturer	Galaxy Microelectronics
File Size	187.43 KB
Description	Power Transistor
Datasheet	2SB1185 Datasheet

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2SB1184	Power Transistor
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Power Transistor FEATURES  Low VCE(sat). VCE(sat)=-0.5V(TYP.) (IC/IB=-2A/-0.2A)  Complements the 2SD1762. Pb Lead-free Production specification 2SB1185 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation DC Pulse Junction and Storage Temperature -50 V -5 V -3 A -4.5 2W -55 to +150 ℃ X016 Rev.A www.gmesemi.com 1 Production specification Power Transistor 2SB1185 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.