• Part: 2SB1185
  • Description: Power Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 187.43 KB
Download 2SB1185 Datasheet PDF
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Datasheet Summary

Power Transistor Features - Low VCE(sat). VCE(sat)=-0.5V(TYP.) (IC/IB=-2A/-0.2A) - plements the 2SD1762. Pb Lead-free Production specification TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation DC Pulse Junction and Storage Temperature -50 V -5 V -3 A -4.5 2W -55 to +150 ℃ X016 Rev.A .gmesemi. Production...