2SB1182D
2SB1182D is PNP Transistor manufactured by SeCoS Halbleitertechnologie GmbH.
PNP Silicon Elektronische Bauelemente
General Purpose Transistor
TO-252
6. 50Ć0. 15
Features
The 2SB1182DX is designed for medium power amplifier application
9. 70Ć0. 20 0. 75Ć0. 10
5. 30Ć0. 10
2. 30Ć0. 10 0. 51Ć0. 05
C Low collector saturation voltage: VCE(sat)=-0.5V (Typ.)
RoHS pliant Product
0. 51Ć0. 10 1. 20 0Ć0. 10 5 0. 80Ć0. 10 5
1. 60Ć0. 15
2. 30Ć0. 10
0. 60Ć 0. 10
0 Ć9 0. 51
2. 30Ć0. 10
- MAXIMUM RATINGS- TA=25 C unless otherwise noted
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current -Pulse,Pw=100mS Collector Dissipation Junction and Storage Temperature Symbol VCBO...
