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2SB1182D - PNP Transistor

Key Features

  • The 2SB1182DX is designed for medium power amplifier.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB1182D PNP Silicon Elektronische Bauelemente General Purpose Transistor TO-252 6. 50Ć0. 15 FEATURES The 2SB1182DX is designed for medium power amplifier application 9. 70Ć0. 20 0. 75Ć0. 10 5. 30Ć0. 10 2. 30Ć0. 10 0. 51Ć0. 05 C Low collector saturation voltage: VCE(sat)=-0.5V (Typ.) RoHS Compliant Product 5 0. 51Ć0. 10 1. 20 0Ć0. 10 5 0. 80Ć0. 10 5 1. 60Ć0. 15 2. 30Ć0. 10 0. 60Ć 0. 10 0 Ć9 0. 51 B O C E 2. 30Ć0.