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2SB1188 - PNP Silicon Medium Power Transistor

General Description

The 2SB1188 is designed for medium power amplifier applications.

Key Features

  • Low VCE(sat).
  • RoHS Compliant Product.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente 2SB1188 -2A, -40V PNP Silicon Medium Power Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The 2SB1188 is designed for medium power amplifier applications. FEATURES  Low VCE(sat)  RoHS Compliant Product CLASSIFICATION OF hFE Product-Rank 2SB1188-Q Range 120~270 Marking BCQ 2SB1188-R 180~390 BCR SOT-89 123 A EC 4 B F G H J D K L PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch Collector   Base REF. A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.25 2.60 1.50 1.85 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.