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Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1188
TRANSISTOR (PNP)
SOT-89
1. BASE
FEATURES Power dissipation PCM: 0.5 Collector current -2 ICM: Collector-base voltage V(BR)CBO: -40
W (Tamb=25℃) A
1 2. COLLECTOR 2 3. EMITTER 3
V
Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain * Collector-emitter saturation voltage * Transition frequency Output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCe(sat) Test conditions MIN -40 -32 -5 -1 -1 82 390 -0.