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2SB1188 - Plastic-Encapsulated Transistors

Key Features

  • Power dissipation PCM: 0.5 Collector current -2 ICM: Collector-base voltage V(BR)CBO: -40 W (Tamb=25℃) A 1 2.

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Datasheet Details

Part number 2SB1188
Manufacturer TRANSYS
File Size 83.79 KB
Description Plastic-Encapsulated Transistors
Datasheet download datasheet 2SB1188 Datasheet

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Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1188 TRANSISTOR (PNP) SOT-89 1. BASE FEATURES Power dissipation PCM: 0.5 Collector current -2 ICM: Collector-base voltage V(BR)CBO: -40 W (Tamb=25℃) A 1 2. COLLECTOR 2 3. EMITTER 3 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain * Collector-emitter saturation voltage * Transition frequency Output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCe(sat) Test conditions MIN -40 -32 -5 -1 -1 82 390 -0.