Weitron 2SB1182
PNP PLASTIC ENCAPSULATE TRANSISTORS
| Part No. | 2SB1182 |
|---|---|
| Datasheet | 2SB1182 Download |
| Manufacturer |  Weitron |
| Description | PNP PLASTIC ENCAPSULATE TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits -40 -32 -5.0 -2.0 1.5 +150 -55 to +150 Unit V V V A W ˚C ˚CELECTRICAL CHARACTERISTICS
(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=-50µA Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -40 -32 -5.0 Typ Max -1.0 -1.0 Unit V V V µA µA Collector-Emitter Breakdown Voltage IC=-1.0mA Emitter-Base Breakdown Voltage IE=-50µA VCB=-20V VEB =-4.0V WEITRON 1/5 30-Nov-07 Free Datasheet 2SB1182 ON CHARACTERISTICS DC Current Gain VCE=-3V, IC=-500mA Collector-Emitter Saturation Voltage IC =-2A, IB =-200mA hFE(1) VCE(sat) 82 390 -0.8 V DYNAMIC CHARACTERISTICS Transition Frequency VCE=-5V, IC =-500mA, f=30MHz Output Capacitance VCB=-10V, I E =0, f=1.0MHz fT Cob 100 50 MHz pF CLASSIFICATION OF hFE(1) Rank Range P 82 - 180 Q 120 - 270 R 1...
