2SB1182 Description
IC (mA) −0.5 COLLECTOR CURRENT : VBE (V) 0 −0.4 −0.8 −1.2 IB=0A −1.6 −2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics 500 DC CURRENT GAIN.
| Part number | 2SB1182 |
|---|---|
| Download | 2SB1182 Datasheet (PDF) |
| File Size | 926.13 KB |
| Manufacturer | Weitron |
| Description | PNP PLASTIC ENCAPSULATE TRANSISTORS |
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| Manufacturer | Part Number | Description |
|---|---|---|
ROHM |
2SB1182 | Medium power Transistor |
| 2SB1182 | Silicon PNP Power Transistor | |
Kexin Semiconductor |
2SB1182 | Medium Power Transistor |
Unisonic Technologies |
2SB1182 | PNP TRANSISTOR |
Galaxy Microelectronics |
2SB1182 | Medium Power Transistor |
IC (mA) −0.5 COLLECTOR CURRENT : VBE (V) 0 −0.4 −0.8 −1.2 IB=0A −1.6 −2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics 500 DC CURRENT GAIN.