| Part number | 2SB1182 |
|---|---|
| Datasheet | 2SB1182_Weitron.pdf |
| File Size | 926.13 KB |
| Manufacturer | Weitron |
| Description | PNP PLASTIC ENCAPSULATE TRANSISTORS |
|
|
IC (mA) −0.5 COLLECTOR CURRENT : VBE (V) 0 −0.4 −0.8 −1.2 IB=0A −1.6 −2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics 500 DC CURRENT GAIN.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB1182 | Medium power Transistor | Rohm |
 |
2SB1182 | Silicon PNP Power Transistor | Inchange Semiconductor |
 |
2SB1182 | Medium Power Transistor | Kexin |
 |
2SB1182 | PNP TRANSISTOR | UTC |
 |
2SB1182 | Medium Power Transistor | GME |
| Part Number | Description |
|---|---|
| 2SB1184 | PNP Transistor |
| 2SB1116 | PNP General Purpose Transistor |
| 2SB1116A | PNP General Purpose Transistor |
| 2SB1197 | PNP Transistor |
| 2SB624 | PNP Transistor |
| 2SB766A | PNP Transistor |
| 2SB776 | PNP Transistor |
| 2SB985 | PNP Transistor |
