| Part Number | 2SB1182 Datasheet |
|---|---|
| Manufacturer | ROHM |
| Overview |
Medium power transistor (32V, 2A)
2SB1182 / 2SB1240
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.
Structure Epitaxial planar type PNP s.
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.
*Structure Epitaxial planar type PNP silicon transistor *Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1+ *00..21 C0.5 2.3+ *00..21 0.5±0.1 2SB1240 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.9 5.5+ *00..31 1.5±0.3 0. |
2SB1182 Datasheet and Specifications PDF
The 2SB1182 is a Medium power Transistor.
Key Specifications
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2SB1182 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Small and slim package ·100% tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PAR.
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50uA; IC= 0
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.5A; VCE= -3V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT
Current-Gain *Bandwidth Product IC= -500mA;. |
| Part Number | 2SB1182 Datasheet |
|---|---|
| Description | PNP TRANSISTOR |
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
FEATURES
* High current output up to 3A * Low saturation voltage
.
* High current output up to 3A * Low saturation voltage
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1182L-x-AB3-R 2SB1182G-x-AB3-R 2SB1182L-x-TN3-R 2SB1182G-x-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 TO-252 Pin Assignment 1 2 3 B . |
| Part Number | 2SB1182 Datasheet |
|---|---|
| Description | Medium Power Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
Product specification
Medium Power Transistor
FEATURES
Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A)
Complements the 2SD1758.
Pb
Lead-free
2SB1182
APPLICATIONS
Epitaxial planar type. .
* Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) * Complements the 2SD1758. Pb Lead-free 2SB1182 APPLICATIONS * Epitaxial planar type. * PNP silicon transistor. Ordering Information Part Number Package 2SB1182 * TO-252 *: none is for Lead Free package; “G” is for Halogen Free package. T. |