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2SB774 - SILICON PNP TRANSISTOR

Key Features

  • High VEBO,complementary pair with 2SD889(3DG889). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -8.0 V IC -100 mA ICP -200 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO ICEO hFE(1) hFE(2) VCE(sat) fT Cob Test condition IC=-10μA IE=0 IC=-2.0mA IB=0 IE=-10μA IC=0 VCB=-10V IE=0 VCE=-20V IB=0 VCE=-10V IC=-2.0mA VCE=-2.0V IC=-100mA IC=-100mA IB=-10mA VCE=-10V IC=-2.0mA.

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Datasheet Details

Part number 2SB774
Manufacturer LZG
File Size 169.71 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 2SB774 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB774(3CG774) PNP /SILICON PNP TRANSISTOR :/Purpose:Audio frequency amplifier. :VEBO ， 2SD889(3DG889)。 Features:High VEBO,complementary pair with 2SD889(3DG889). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -8.0 V IC -100 mA ICP -200 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO ICEO hFE(1) hFE(2) VCE(sat) fT Cob Test condition IC=-10μA IE=0 IC=-2.0mA IB=0 IE=-10μA IC=0 VCB=-10V IE=0 VCE=-20V IB=0 VCE=-10V IC=-2.0mA VCE=-2.0V IC=-100mA IC=-100mA IB=-10mA VCE=-10V IC=-2.0mA f=200MHz VCB=-10V IE=0 f=1.0MHz Min -30 -25 -8.0 120 80 Rating Typ 150 4.0 Max -1.0 -100 650 -0.