2SB774 - Silicon PNP epitaxial planer type Transistor
Panasonic
Key Features
q q
5.0±0.2
4.0±0.2
High emitter to base voltage VEBO. Protective diodes and resistances between emitter and base can be omitted. s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings.
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Transistor
2SB774
Silicon PNP epitaxial planer type
For low-frequency amplification
Unit: mm
s Features
q q
5.0±0.2
4.0±0.2
High emitter to base voltage VEBO. Protective diodes and resistances between emitter and base can be omitted.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings –30 –25 –15 –200 –100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C
13.5±0.5
5.1±0.2
0.45 –0.1 1.27
+0.2
0.45 –0.1
1.27
+0.2
1 2 3
2.3±0.2
2.54±0.
2SB774 Datasheet
