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3DG1815 - SILICON NPN TRANSISTOR

Key Features

  • High voltage and high current, excellent hFE linearity ,low noise ,complementary pair with 2SA1015(3CG1015). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 60 V VCEO 50 V VEBO 5.0 V IC 150 mA IB 50 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob NF rbb′ VCB=60V IE=0 VEB=5.0V IC=0 VCE=6.0V IC=2.0mA VCE=6.0V IC=150mA IC=100mA IB=10mA IC=100mA.

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Datasheet Details

Part number 3DG1815
Manufacturer LZG
File Size 270.03 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 3DG1815 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC1815(3DG1815) NPN /SILICON NPN TRANSISTOR :,。 Purpose: Audio frequency general purpose ,driver stage amplifier applications. :,, hFE ,, 2SA1015(3CG1015)。 Features: High voltage and high current, excellent hFE linearity ,low noise ,complementary pair with 2SA1015(3CG1015). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 60 V VCEO 50 V VEBO 5.0 V IC 150 mA IB 50 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob NF rbb′ VCB=60V IE=0 VEB=5.0V IC=0 VCE=6.0V IC=2.0mA VCE=6.0V IC=150mA IC=100mA IB=10mA IC=100mA IB=10mA VCE=10V IC=1.0mA VCB=10V IE=0 f=1.0MHz VCE=6.0V IC=0.1mA Rg=10KΩ f=1.0KHz VCB=10V IC=1.