3DG181
Features
: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Specifications
(Ta = 25°C )
Parameter name Symbols Unit
3DG182
C-B Breakdown Voltage V(BR)CBO V
C-E Breakdown Voltage V(BR)CEO V
E-B Breakdown Voltage V(BR)EBO V
Total Dissipation
Ptot m W
Max. Collector Current ICM m A
Junction Temperature Tjm °C
Storage Temperature Tstg °C
A 60 60
B CD E
100 140 180 220
100 140 180 220
≥5 (IE=0.1m A) 700 (Ta=25°C)
F G H I J Test Condition
60 100 140 180 220 IC=0.1m A
60 100 140 180 220
≥5 (IE=0.1m A) 700 (Ta=25°C)
300 175 -55~+175
Collector- Emitter
VCE(sat) V
Saturation Voltage...
