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3DG181 - NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor

Key Features

  • 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611.

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Datasheet Details

Part number 3DG181
Manufacturer Qunli Electric
File Size 45.31 KB
Description NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor
Datasheet download datasheet 3DG181 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3DG181, 3DG182 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Specifications (Ta = 25°C ) Parameter name Symbols Unit 3DG181 3DG182 C-B Breakdown Voltage V(BR)CBO V C-E Breakdown Voltage V(BR)CEO V E-B Breakdown Voltage V(BR)EBO V Total Dissipation Ptot mW Max. Collector Current ICM mA Junction Temperature Tjm °C Storage Temperature Tstg °C A 60 60 B CD E 100 140 180 220 100 140 180 220 ≥5 (IE=0.