3DG182
Features
: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
(Ta = 25°C )
Parameter name
Specifications Symbols Unit
ABCDE FGH I
Test Condition
Total Dissipation
Ptot m W
Ta=25°C
Max. Collector Current ICM m A
Junction Temperature Tjm °C
Storage Temperature Tstg °C
-55~+175
C-B Breakdown Voltage V(BR)CBO V 60 100 140 180 220 60 100 140 180 220 C-E Breakdown Voltage V(BR)CEO V 60 100 140 180 220 60 100 140 180 220
IC=0.1m A
E-B Breakdown Voltage V(BR)EBO V
IE=0.1m A
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
IC=200m A,
Base- Emitter Saturation
VBE(sat) V
Voltage...
