BR2N60 - N-CHANNEL MOSFET

LZG

Key Features

Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 2.0 A ID(Tc=100℃) 1.3 A IDM 6.0 A VGSS ±30 V EAS 120 mJ EAR 5.4 mJ IAR 2.0 A PD(Tc=25℃) 54 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=600V VDS=480V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=1.0A gFS VDS=40V ID=1.0A VSD VGS.

BR2N60 n-channel mosfet by LZG - Datasheet Preview

Datasheet Details

Part number	BR2N60
Manufacturer	LZG
File Size	153.30 KB
Description	N-CHANNEL MOSFET
Datasheet	BR2N60 Datasheet

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Full PDF Text Transcription (Reference)

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BR2N60(CS2N60) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 2.0 A ID(Tc=100℃) 1.3 A IDM 6.0 A VGSS ±30 V EAS 120 mJ EAR 5.4 mJ IAR 2.0 A PD(Tc=25℃) 54 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=600V VDS=480V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=1.0A gFS VDS=40V ID=1.0A VSD VGS=0V IS=2.0A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDD=300V ID=2.