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BR2N60 Datasheet N-channel MOSFET

Manufacturer: LZG

Overview: BR2N60(CS2N60) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

Datasheet Details

Part number BR2N60
Manufacturer LZG
File Size 153.30 KB
Description N-CHANNEL MOSFET
Datasheet BR2N60-LZG.pdf

Key Features

  • Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 2.0 A ID(Tc=100℃) 1.3 A IDM 6.0 A VGSS ±30 V EAS 120 mJ EAR 5.4 mJ IAR 2.0 A PD(Tc=25℃) 54 W TJ,TSTG -55 to 150 ℃ 电性能参数/Electrical Characteristics(Ta=25℃) 参数符号 测试条件 Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=600V VDS=480V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=1.0A gFS V.

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