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BRF2N60 - N-CHANNEL MOSFET

Key Features

  • Low gate charge ,low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS EAS EAR IAR PD(Tc=25℃) TJ,TSTG 600 2.0 1.3 6.0 ±30 120 5.4 2.0 23 -55 to 150 V A A A V mJ mJ A W ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA VDS=600V VGS=0V IDSS VDS=480V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=1.0A gFS VDS=40V ID=1.0A VSD VGS=0V IS=2.0A Ciss Coss VDS=25V VGS=0V f=1.

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Datasheet Details

Part number BRF2N60
Manufacturer LZG
File Size 330.94 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet BRF2N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BRF2N60(CS2N60F) : DC/DC 。 N-CHANNEL MOSFET/N MOS Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge ,low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS EAS EAR IAR PD(Tc=25℃) TJ,TSTG 600 2.0 1.3 6.0 ±30 120 5.4 2.0 23 -55 to 150 V A A A V mJ mJ A W ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA VDS=600V VGS=0V IDSS VDS=480V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=1.0A gFS VDS=40V ID=1.0A VSD VGS=0V IS=2.0A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) tf Min 600 Typ Max 1.0 100 ±0.1 4.0 5.0 1.4 420 46 6.0 30 60 60 70 2.0 4.