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LM8012P
P-Channel Enhancement Mode Power MOSFET
1. FEATURES
● Low Profile DFN 2.0x2.0x0.62 mm for Board Space Saving ● Ultra Low RDS(on) ● This is a Pb-Free Device ● We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
2.APPLICATIONS
● Battery Switch ● High Side Load Switch
3. ORDERING INFORMATION
Device LM8012P
Marking 32
Shipping 4000/Tape&Reel
32 = Device Code Y = Date Code*
4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated)
Parameter
Symbol
Limits
Unit
Drain−to−Source Voltage
VDSS
18
V
Gate−to−Source Voltage
VGS
±8
V
Drain Current (Note 1)Steady State
ID
8
A
Pulsed Drain Current (tp = 10 µs)
IDM
20
A
Power Dissipation (Note 1)
Steady State
PD
1.4
W
t<7s
3.
LM8012P Datasheet
