Datasheet Summary
P-Channel Enhancement Mode Power MOSFET
1. Features
- Low Profile DFN 2.0x2.0x0.62 mm for Board Space Saving
- Ultra Low RDS(on)
- This is a Pb-Free Device
- We declare that the material of product are Halogen Free and pliance with RoHS requirements.
2.APPLICATIONS
- Battery Switch
- High Side Load Switch
3. ORDERING INFORMATION
Device LM8012P
Marking 32
Shipping 4000/Tape&Reel
32 = Device Code Y = Date Code-
4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated)
Parameter
Symbol
Limits
Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±8
Drain Current (Note 1)Steady State
Pulsed Drain Current (tp = 10 µs)
Power...