Datasheet4U Logo Datasheet4U.com

LM8S14P03 - 30 V P-Channel Enhancement Mode MOSFET

General Description

The LM8S14P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 30V ID = 14A RDS(ON) < 8.7mΩ @ VGS=10V.

📥 Download Datasheet

Datasheet Details

Part number LM8S14P03
Manufacturer Leiditech
File Size 1.92 MB
Description 30 V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet LM8S14P03 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
LM80 Serial Interface ACPI-Compatible Microprocessor System Hardware Monitor National Semiconductor
LM80 Serial Interface ACPI-Compatible Microprocessor System Hardware Monitor Texas Instruments
LM8002 3W Audio Power Amplifier HONGLIFA ELECTRONICS
LM8002 Audio amplifier Crystal Electronic
LM8003 3 SIRENS AND MACHINE GUN Unisonic Technologies

Other Datasheets by Leiditech

Part Number Description
LM8012P P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Description The LM8S14P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. LM8S14P03 30 V P-Channel Enhancement Mode MOSFET General Features VDS = 30V ID = 14A RDS(ON) < 8.