L2SA1365ELT1G
L2SA1365ELT1G is General Purpose Transistor manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
- Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
- Excellent linearity of DC forward current gain.
- Super mini package for easy mounting
- High collector current ICM=-1A
- High gain band width product fT =180MHz typ
- We declare that the material of product pliance with RoHS requirements.
- We declare that the material of product is ROHS pliant
- S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, AEC-Q101 Qualified and PPAP...
