L2SA1365ELT3G datasheet by Leshan Radio Company.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | L2SA1365ELT3G |
|---|---|
| Datasheet | L2SA1365ELT3G L2SA1365ELT1G Datasheet (PDF) |
| File Size | 677.20 KB |
| Manufacturer | Leshan Radio Company |
| Description | General Purpose Transistor |
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L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). F.EATURE Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ Excellent linearity of DC forward current gain.
View all Leshan Radio Company datasheets
| Part Number | Description |
|---|---|
| L2SA1365ELT1G | General Purpose Transistor |
| L2SA1365FLT1G | General Purpose Transistor |
| L2SA1365FLT3G | General Purpose Transistor |
| L2SA1365GLT1G | General Purpose Transistor |
| L2SA1365GLT3G | General Purpose Transistor |
| L2SA1036KPLT1 | Medium Power Transistor |
| L2SA1036KQLT1 | Medium Power Transistor |
| L2SA1036KQLT1G | Medium Power Transistor |
| L2SA1036KRLT1 | Medium Power Transistor |
| L2SA1036KRLT1G | Medium Power Transistor |
