L2SA1576AxT1
L2SA1576AxT1 is General Purpose Transistors PNP Silicon manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
General Purpose Transistors
PNP Silicon
3 COLLECTOR
L2SA1576A- T1
..
1 BASE
2 EMITTER
SC-70/SOT- 323
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Collector power dissipation Junction temperature Storage temperature Symbol V CEO V CBO V
Value
- 50
- 60
- 6.0
- 150 0.2 150 -55 ~+150
Unit V V V m Adc W °C °C
IC PC Tj T stg
DEVICE MARKING
L2SA1576AQT1 =FQ L2SA1576ART1 =FR L2SA1576AST1 =FS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Collector- Emitter Breakdown Voltage (IC =
- 1 m A) Emitter- Base Breakdown Voltage (IE =
- 50 µA) Collector- Base Breakdown Voltage (IC =
- 50 µA) Collector Cutoff Current (VCB =
- 60 V) Emitter cutoff current (VEB =
- 6 V) Collector-emitter saturation voltage (IC/ IB =
- 50 m A /
- 5m A) DC current transfer ratio (V CE =
- 6 V, I C=
- 1m A) Transition frequency (V CE =
- 12 V, I E= 2m A, f=30MHz ) Output capacitance (V CB =
- 12 V, I E= 0A, f =1MHz ) V CE(sat) h FE f T C ob
- 120
- -...