• Part: L2SA1576AxT1
  • Description: General Purpose Transistors PNP Silicon
  • Category: Transistor
  • Manufacturer: Leshan Radio Company
  • Size: 131.76 KB
Download L2SA1576AxT1 Datasheet PDF
Leshan Radio Company
L2SA1576AxT1
L2SA1576AxT1 is General Purpose Transistors PNP Silicon manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR L2SA1576A- T1 .. 1 BASE 2 EMITTER SC-70/SOT- 323 MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current - Continuous Collector power dissipation Junction temperature Storage temperature Symbol V CEO V CBO V Value - 50 - 60 - 6.0 - 150 0.2 150 -55 ~+150 Unit V V V m Adc W °C °C IC PC Tj T stg DEVICE MARKING L2SA1576AQT1 =FQ L2SA1576ART1 =FR L2SA1576AST1 =FS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Collector- Emitter Breakdown Voltage (IC = - 1 m A) Emitter- Base Breakdown Voltage (IE = - 50 µA) Collector- Base Breakdown Voltage (IC = - 50 µA) Collector Cutoff Current (VCB = - 60 V) Emitter cutoff current (VEB = - 6 V) Collector-emitter saturation voltage (IC/ IB = - 50 m A / - 5m A) DC current transfer ratio (V CE = - 6 V, I C= - 1m A) Transition frequency (V CE = - 12 V, I E= 2m A, f=30MHz ) Output capacitance (V CB = - 12 V, I E= 0A, f =1MHz ) V CE(sat) h FE f T C ob - 120 - -...