Datasheet4U Logo Datasheet4U.com

L2SB1197KRLT1G - Low Frequency Transistor PNP Silicon

This page provides the datasheet information for the L2SB1197KRLT1G, a member of the L2SB1197KxLT1 Low Frequency Transistor PNP Silicon family.

📥 Download Datasheet

Datasheet preview – L2SB1197KRLT1G

Datasheet Details

Part number L2SB1197KRLT1G
Manufacturer Leshan Radio Company
File Size 119.36 KB
Description Low Frequency Transistor PNP Silicon
Datasheet download datasheet L2SB1197KRLT1G Datasheet
Additional preview pages of the L2SB1197KRLT1G datasheet.

📁 Similar Datasheet

Other Datasheets by Leshan Radio Company

Full PDF Text Transcription

Click to expand full text
LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197K*LT1 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. www.DataSheet4U.com ƽEpitaxial planar type. ƽNPN complement: L2SD1781K ƽPb-Free Package is available. 3 1 2 SOT– 23 (TO–236AB) DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G AHQ AHQ (Pb-Free) AHR AHR (Pb-Free) 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel MAXIMUM RATINGS(Ta=25qC) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −40 −32 −5 −0.8 0.
Published: |