L2SB1197KRLT1G
L2SB1197KRLT1G is Low Frequency Transistor PNP Silicon manufactured by Leshan Radio Company.
- Part of the L2SB1197KxLT1 comparator family.
- Part of the L2SB1197KxLT1 comparator family.
LESHAN RADIO PANY, LTD.
Low Frequency Transistor
PNP Silicon
L2SB1197K- LT1
FEATURE
ƽHigh current capacity in pact package. IC = í0.8A.
.. ƽEpitaxial planar type. ƽNPN plement: L2SD1781K ƽPb-Free Package is available.
1 2
SOT- 23 (TO- 236AB)
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G
AHQ (Pb-Free)
AHR (Pb-Free)
3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel
MAXIMUM RATINGS(Ta=25q C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits
- 40
- 32
- 5
- 0.8 0.2 150
- 55 to 150
Unit V V V A W °C °C
ELECTRICAL CHARACTERISTICS(Ta=25q C)
Parameter
Symbol...
