L2SB1197KRLT3G Datasheet | Leshan Radio Company

LESHAN RADIO PANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon S-L2SB1197KQ LT1G Series FEATURE ƽHigh current capacity in pact package. IC = í0.8A. ƽEpitaxial planar type. ƽNPN plement: L2SD1781K ƽWe declare that the material of product pliance with Ro HS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 SOT- 23 (TO- 236AB) DEVICE MARKING AND ORDERING INFORMATION Device L2SB1197KQLT1G S-L2SB1197KQLT1G L2SB1197KQLT3G S-L2SB1197KQLT3G L2SB1197KRLT1G S-L2SB1197KRLT1G L2SB1197KRLT3G S-L2SB1197KRLT3G MAXIMUM RATINGS(Ta=25q C) Marking AHQ AHQ AHR Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits - 40 - 32 - 5 - 0.8 0.2 150 - 55 to...