L2SC2412KQLT1 - General Purpose Transistors NPN Silicon

This page provides the datasheet information for the L2SC2412KQLT1, a member of the L2SC2412KxLT1 General Purpose Transistors NPN Silicon family.

Leshan Radio Company

📥 Download Datasheet

Datasheet Details

Part number	L2SC2412KQLT1
Manufacturer	Leshan Radio Company
File Size	130.90 KB
Description	General Purpose Transistors NPN Silicon
Datasheet	L2SC2412KQLT1 Datasheet
Additional preview pages of the L2SC2412KQLT1 datasheet.

📁 Similar Datasheet

L2SC3838NLT1G - High-Frequency Amplifier (LRC)
L2SA1576AQLT1G - General Purpose Transistors (LRC)
L2SA1576AQLT3G - General Purpose Transistors (LRC)
L2SA1576AQT1G - General Purpose Transistors (LRC)
L2SK3018WT1G - N-channel MOSFET (LRC)
L2SK3019LT1G - Silicon N-Channel MOSFET (LRC)
L2SK801LT1G - Small Signal MOSFET (LRC)

Other Datasheets by Leshan Radio Company

L2SC2412KQLT1G - General Purpose Transistors NPN Silicon
L2SC2412KQLT3G - General Purpose Transistors
L2SC2412KQMT1G - General Purpose Transistor
L2SC2412KQMT3G - General Purpose Transistor
L2SC2412KRLT1 - General Purpose Transistors NPN Silicon
L2SC2412KRLT1G - General Purpose Transistors NPN Silicon
L2SC2412KRLT3G - General Purpose Transistors
L2SC2412KRMT1G - General Purpose Transistor

Full PDF Text Transcription

Click to expand full text

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412K*LT1 • Pb−Free Package is Available. www.DataSheet4U.com 3 COLLECTOR 3 MAXIMUM RATINGS 1 BASE 2 EMITTER 1 2 SOT– 23 Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C Collector power dissipation PC Junction temperature Tj 50 V 60 V 7.0 V 150 mAdc 0.2 W 150 °C Storage temperature T stg -55 ~+150 °C DEVICE MARKING L2SC2412KQLT1 =BQ L2SC2412KRLT1 =BR L2SC2412KSLT1 =G1F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.

Published: Aug 12, 2015 |