L2SC2412KQLT1G
LESHAN RADIO PANY, LTD.
General Purpose Transistors
NPN Silicon
L2SC2412K- LT1
- Pb- Free Package is Available.
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3 COLLECTOR
MAXIMUM RATINGS
1 BASE
2 EMITTER
1 2
SOT- 23
Rating
Symbol Value
Unit
Collector- Emitter Voltage
V CEO
Collector- Base Voltage
V CBO
Emitter- Base Voltage
V EBO
Collector Current
- Continuous I C
Collector power dissipation
Junction temperature
Tj
50 V 60 V 7.0 V 150 m Adc 0.2 W 150 °C
Storage temperature
T stg -55 ~+150 °C
DEVICE MARKING
L2SC2412KQLT1 =BQ L2SC2412KRLT1 =BR L2SC2412KSLT1 =G1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector- Emitter Breakdown Voltage (IC = 1 m A) Emitter- Base Breakdown Voltage (IE = 50 µA) Collector- Base Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = 7 V) Collector-emitter saturation voltage (IC/ IB = 50 m A / 5m A) DC current transfer ratio (V CE = 6 V, I C= 1m A) Transition frequency (V CE = 12 V, I E=
- 2m A, f...
