Leshan Radio Company L8550QLT1
General Purpose Transistors
| Part No. | L8550QLT1 |
|---|---|
| Datasheet | L8550QLT1 Download |
| Manufacturer |  Leshan Radio Company |
| Description | General Purpose Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base voltage Emitter-base Voltage Collector current-continuoun THERMALCHARACTERISTICS V CEO V CBO V EBO IC 25 V 40 V 5V 800 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (1) T A = 25 °C Derate above 25 °C PD 225 mW 1.8 mW /°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C R θJA 556 °C/W PD 300 mW 2.4 mW /°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICEMARKING R θJA 417 °C/W T J , T stg -55 to +150 °C L8550QLT1 = 1YD L8550PLT1=85PELECTRICAL CHARACTERISTICS
(T A = 25 °C unless otherwise noted) Characteristic Symb
