Leshan Radio Company L8550QLT1G
General Purpose Transistors
| Part No. | L8550QLT1G |
|---|---|
| Datasheet | L8550QLT1G Download |
| Manufacturer |  Leshan Radio Company |
| Description | General Purpose Transistors |
| Buy | Stock & Price |
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L8550PLT1G s-L8550PLT1G 85P 3000/Tape&Reel L8550PLT3G s-L8550PLT3G 85P 10000/Tape&Reel L8550QLT1G s-L8550QLT1G 1YD 3000/Tape&Reel L8550QLT3G L8550RLT1G s-L8550QLT3G s-L8550RLT1G 1YD 1YF 10000/Tape&Reel 3000/Tape&Reel L8550RLT3G s-L8550RLT3G 1YF 10000/Tape&Reel L8550SLT1G s-L8550SLT1G 1YH 3000/Tape&Reel L8550SLT3G s-L8550SLT3G 1YH 10000/Tape&ReelMAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base voltage Emitter-base Voltage Collector current-continuoun Symbol V CEO V CBO V EBO IC Value -25 -40 -5 -800 Unit V V V mAdc THERMALCHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW /°C R θJA 556 °C/W PD 300 mW 2.4 mW /°C R θJA 417 °C/W T J , T stg -55 to +150 °C 1.
