LBC848CDW1T1G Datasheet | Leshan Radio Company

LESHAN RADIO PANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT- 363/SC- 88 which is designed for low power surface mount applications. We declare that the material of product pliance with Ro HS requirements. 6 54 LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G Q2 Q1 See Table MAXIMUM RATINGS Rating Symbol Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current -Continuous V CEO V CBO V EBO BC846 65 80 6.0 100 BC847 BC848 45 30 50 30 6.0 5.0 100 100 Unit V V V m Adc 6 5 1 2 SOT-363 /SC-88 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR- 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR- 5 = 1.0 x 0.75 x 0.062 in. ORDERING INFORMATION Device LBC846BDW1T1G LBC846BDW1T3G LBC847BDW1T1G LBC847BDW1T3G LBC847CDW1T1G LBC847CDW1T3G LBC848BDW1T1G LBC848BDW1T3G LBC848CDW1T1G LBC848CDW1T3G Marking 1B 1B 1F 1F 1G 1G 1K 1K 1L...