• Part: LBC848CPDW1T1
  • Description: (LBC84xxPDW1T1) Dual General Purpose Transistors NPN/PNP Duals
  • Category: Transistor
  • Manufacturer: Leshan Radio Company
  • Size: 283.51 KB
Download LBC848CPDW1T1 Datasheet PDF
Leshan Radio Company
LBC848CPDW1T1
LBC848CPDW1T1 is (LBC84xxPDW1T1) Dual General Purpose Transistors NPN/PNP Duals manufactured by Leshan Radio Company.
- Part of the LBC848BPDW1T1 comparator family.
LESHAN RADIO PANY, LTD. Dual General Purpose Transistors .. NPN/PNP Duals (plimentary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT- 363/SC- 88 which is designed for low power surface mount applications. - Device Marking: LBC846BPDW1T1 = BB LBC847BPDW1T1 = 13F LBC847CPDW1T1 = 13G LBC848BPDW1T1 = 13K LBC848CPDW1T1 = 13L LBC846BPDW1T1 LBC847BPDW1T1 LBC847CPDW1T1 LBC848BPDW1T1 LBC848CPDW1T1 6 5 4 1 2 3 SOT-363/SC-88 CASE 419B STYLE 1 MAXIMUM RATINGS - NPN Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Ð Continuous Symbol VCEO VCBO VEBO IC LBC846 LBC847 LBC848 65 80 6.0 100 45 50 6.0 100 30 30 5.0 100 Unit V V V m Adc Q1 Q2 MAXIMUM RATINGS - PNP Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Ð Continuous Symbol VCEO VCBO VEBO IC LBC846 LBC847 LBC848 Unit V V V m Adc DEVICE MARKING -65 -80 -5.0 -100 -45 -50 -5.0 -100 -30 -30 -5.0 -100 See Table THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR-5 Board (1) TA = 25˚C Derate Above 25˚C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR-5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 Unit m W ORDERING INFORMATION Device LBC846BPDW1T1 Package SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 Shipping 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3.0 RθJA TJ, Tstg 328 -55 to +150 m W/˚C ˚C/W ˚C LBC847BPDW1T1 LBC847CPDW1T1 LBC848BPDW1T1 LBC848CPDW1T1 LBC846BP - 1/9 LESHAN RADIO PANY,...