LBCW68GLT1G
LBCW68GLT1G is General Purpose Transistors manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
..
General Purpose Transistors
1 2
PNP Silicon
We declare that the material of product pliance with Ro HS requirements.
ORDERING INFORMATION
Device LBCW68GLT1G LBCW68GLT3G Marking DG DG Shipping 3000/Tape&Reel 10000/Tape&Reel
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Symbol V V V
CEO CBO EBO
CASE 318- 08, STYLE 6 SOT- 23 (TO- 236AB)
Value
- 45
- 60
- 5.0
- 800
Unit Vdc Vdc Vdc m Adc
1 BASE 3 COLLECTOR
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417
- 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C
2 EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage (IC =
- 10 m Adc, IB = 0 ) Collector- Emitter Breakdown Voltage (IC =
- 10 µAdc, VEB = 0 ) Emitter- Base Breakdown Voltage (I...
