Leshan Radio Company LBCW69LT1G
General Purpose Transistors PNP Silicon
| Part No. | LBCW69LT1G |
|---|---|
| Datasheet | LBCW69LT1G Download |
| Manufacturer |  Leshan Radio Company |
| Description | General Purpose Transistors PNP Silicon |
| Buy | Stock & Price |
MAXIMUM RATINGS
CASE 318–08, STYLE 6 Rating Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V EBO Value – 45 – 5.0 – 100 Unit Vdc Vdc mAdc SOT–23 (TO–236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING LBCW69LT1G = H1; LBCW70LT1G= H2ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 ) Collector–Emitter Breakdown Voltage (IC = –100 µAdc, V EB = 0 ) Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) Collector Cutoff Current (VCE = –20 Vdc, I E = 0 ) (VCE = –20 Vdc, I E = 0 , TA = 100°C) 1.
