LBCW69LT1G
LBCW69LT1G is General Purpose Transistors PNP Silicon manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
General Purpose Transistors
..
PNP Silicon
3 COLLECTOR
LBCW69LT1G LBCW70LT1G
1 BASE
Featrues
We declare that the material of product pliance with Ro HS requirements.
2 EMITTER
1 2
MAXIMUM RATINGS
CASE 318- 08, STYLE 6
Rating Collector- Emitter Voltage Emitter- Base Voltage Collector Current
- Continuous
Symbol V CEO V
Value
- 45
- 5.0
- 100
Unit Vdc Vdc m Adc
SOT- 23 (TO- 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417
- 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C
DEVICE MARKING
LBCW69LT1G = H1; LBCW70LT1G= H2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS...
