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LESHAN RADIO COMPANY, LTD.
N-CHANNEL POWER MOSFET
LBSS123LT1G
FEATURE
ƽ Pb-Free Package is available. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBSS123LT1G S-LBSS123LT1G
SA
3000/Tape&Reel
LBSS123LT3G S-LBSS123LT3G
SA 10000/Tape&Reel
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs)
Drain Current Continuous (Note 1.) Pulsed (Note 2.)
Symbol VDSS
VGS VGSM
ID IDM
Value 100
±20 ±40
0.17 0.68
Unit Vdc
Vdc Vpk Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5
Board (Note 3.)
TA = 25°C Derate above 25°C
PD 225 mW 1.
LBSS123LT3G Datasheet
