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LMBT3904LT1G Datasheet PDF

Leshan Radio Company LMBT3904LT1G

General Purpose NPN Silicon Transistor

Part No. LMBT3904LT1G
Datasheet LMBT3904LT1G Download
Manufacturer
Leshan Radio Company
Description General Purpose NPN Silicon Transistor
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LMBT3904LT1G datasheet page 1 preview

FEATURES

● We declare that the material of product compliance with RoHS requirements and Halogen Free. SOT23(TO-236) 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT3904LT1G 1AM 3000/Tape&Reel LMBT3904LT3G 1AM 13000/Tape&Reel 1 BASE 3 COLLECTOR 2 EMITTER 3.

MAXIMUM RATINGS

(Ta = 25ºC) Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO 40 V Collector–Base Voltage VCBO 60 V Emitter–Base Voltage VEBO 6 V Collector Current — Continuous IC 200 mA 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) Junction–to–Case(Note 1) Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. Symbol PD Limits Unit 225 mW 1.8 mW/ºC RΘJA RΘJC TJ,Tstg 556 ºC/W 300 ºC/W −55∼+150 ºC Leshan Radio Company, LTD. Rev.D Dec. 2023 1/5 LMBT3904LT1G General Purpose Transistors NPN Silicon 5.

ELECTRICAL CHARACTERISTICS

(Ta= 25ºC) OFF CHARACTERISTICS Characteristic Symbol Colle...
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