Datasheet4U Logo Datasheet4U.com

LMBT3946DW1T1 - Transistors

Features

  • VC FOR V CE(sat) 0 -0.5 +25˚C TO+125˚C -55˚C TO +25˚C -55˚C TO+25 ˚C -1.0 -1.5 -2.0 θVB FOR V +25˚C TO+125 ˚C BE(sat) 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC,.

📥 Download Datasheet

Datasheet Details

Part number LMBT3946DW1T1
Manufacturer Leshan Radio Company
File Size 253.30 KB
Description Transistors
Datasheet download datasheet LMBT3946DW1T1 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low–power surface mount applications where board space is at a premium. • hFE, 100–300 • Low VCE(sat), < 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7–inch/3,000 Unit Tape and Reel • Device Marking: LMBT3946DW1T1 = 46 Symbol V CEO Value 40 -40 V CBO LMBT3946DW1T1 6 5 4 www.DataSheet4U.
Published: |