Leshan Radio Company LMBT5401LT1
Transistor
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 R θJA Unit mW mW/°C °C/W mW mW/°C °C/W °C 556 300 2.4 417 –55to+150 PD R θJA T J , Tstg DEVICE MARKING LMBT5401LT1=2LELECTRICAL CHARACTERISTICS
(T A = 25° C unless otherwise noted) Characteristic Symbol V (BR)CEO – 150 V (BR)CBO – 160 V(BR)EBO -5.0 I CES — — – 50 – 50 nAdc µ Adc — — Vdc — Vdc Min Ma x Unit Vdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –100 µAdc, I E = 0) Emitter-BAse Breakdown Voltage (I E= –10µAdc,I C=0) Collector Cutoff Current (V CB = –120 Vdc, IE= 0) (V CB = –120 Vdc, IE= 0, T A=100 °C) 1.