Leshan Radio Company LMBT5401LT1G
High Voltage Transistor
| Part No. | LMBT5401LT1G |
|---|---|
| Datasheet | LMBT5401LT1G Download |
| Manufacturer |  Leshan Radio Company |
| Description | High Voltage Transistor |
| Buy | Stock & Price |
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5401LT1G S-LMBT5401LT1G LMBT5401LT3G S-LMBT5401LT3G 2L 2L 3000/Tape&Reel 10000/Tape&ReelMAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol V CEO V CBO V EBO IC Value – 150 – 160 – 5.0 – 500 Unit Vdc Vdc Vdc mAdc Symbol PD Max 225 Unit mW R θJA PD 1.8 mW/°C 556 °C/W 300 mW R θJA T J , Tstg 2.4 417 –55to+150 mW/°C °C/W °C DEVICE MARKING LMBT5401LT1G=2L LMBT5401LT1G S-LMBT5401LT1G 3 1 2 SOT– 23 1 BASE 3 COLLECTOR 2 EMITTER ELECTRICAL CHARACTERIST...
