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LMUN5330DW1T1G Datasheet PDF

Leshan Radio Company LMUN5330DW1T1G

the LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
Part No. LMUN5330DW1T1G
Datasheet LMUN5330DW1T1G Download
Manufacturer
Leshan Radio Company
Description Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors
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LMUN5330DW1T1G datasheet page 1 preview

MAXIMUM RATINGS

(T A = 25°C unless otherwise noted, common for Q 1 6 5 4 and Q 2 , – minus sign for Q 1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Symbol Value 50 V CBO 50 V CEO 100 IC Unit Vdc Vdc mAdc Q2 R2 R1 1 2 R1 R2 Q1 3 Symbol PD Max 187 (Note 1.) 256 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) Unit mW mW/°C °C/W MARKING DIAGRAM 6 5 4 XX 1 2 3 R θJA 670 (Note 1.) 490 (Note 2.) xx = Device Marking = (See Page 2) Symbol PD Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) Unit mW mW/°C °C/W °C/W °C DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. R θJA R θJL T J , T stg 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) –55 to +150 Junction-to-Ambient Thermal Resistance – Junction-to-Lead Junction and Storage Temperature 1.
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